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BQ35LORA900V1M – RF Daughterboard Module

$99.00

SKU: N/A Category:
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For Europe Customers: The EU VAT is handled by our logistics partner, for Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Hungary, Ireland, Italy, Luxembourg, Netherlands, Poland, Portugal, Spain, Sweden, Switzerland. The delivery person will deliver the product directly to your address without collecting tax and customs clearance fees on delivery.
As our logistics partners are currently unable to handle VAT for European countries that are not on the above list, we can currently only ship packages to European countries on the above list.
Package/lot:
  • 1 x BQ35LORA900V1M - RF Daughterboard Module
Shipping To: Australia, Austria, Belgium, Canada, Czech Republic, Denmark, Finland, France, Germany, Hungary, Ireland, Israel, Italy, Japan, Kuwait, Luxembourg, Netherlands, New Zealand, Poland, Portugal, Spain, Sweden, Switzerland, United Arab Emirates, United Kingdom (UK), United States (US)
Ships From: Shenzhen, China

⚠️ Important Notice: This is an RF daughterboard module only, not a turnkey solution. To assemble a fully functional mesh node, you will also need the Motherboard for Station G3 and a compatible MCU daughterboard.

Modular RF Module Designed for Engineers and Hams

The BQ35LORA900V1M is a high-performance LoRa RF daughterboard module engineered for fixed-location base stations, vehicle-mounted base stations, and advanced mesh network deployments. As part of the Station G3 modular architecture, this RF module can be used independently with compatible motherboards and MCU boards to build customized mesh nodes.

Key Specifications

High-Power TX Performance

  • Adjustable Output Power: Fully configurable to meet regional regulations and link budget requirements .
  • Peak Power Output: Reaches up to 36.8 dBm ±2 dBm (~4.7 W) for US915 and 37 dBm ±2 dBm (~5 W) for EU868 bands . (Note: Some firmware may limit the Peak Power Output)

Advanced RX LNA Architecture

  • Featuring dynamic gain control, dynamic impedance matching, and an LNA bypass/disable function .
  • Empowers superior compatibility with high-gain monopole antennas in high-noise environments—outperforming previous generations in co-channel interference mitigation and dynamic range .

Typical RF Performance

Item
Description
LoRa Operation Frequency
815 MHz to 940 MHz (US915 / EU868)
LoRa Max RF Output Power
Up to 35 dBm (Max RF Output Power for Non-Boost Mode)
PA Operating Mode
4 Configurable Power Levels
LoRa Ultra-Low Noise Figure LNA
Typical Gain: 10 dB – 16 dB Dynamic Gain, Typical Noise Figure: 1.5 dB
LNA Operating Mode
ON/OFF with Dynamic Gain & Impedance Matching
LoRa Transceiver
SX1262
High-Precision Frequency Reference for LoRa
32 MHz TCXO (±1.5 ppm)

Compatible MCU Daughterboards

The BQ35LORA900V1M RF module connects via the standard Raspberry Pi 40-pin GPIO header definition on the Station G3 motherboard. The following MCU daughterboards are currently compatible:

MCU Daughterboard
Description
Built with ESP32 S3 (Flash: 16 MB, PSRAM: 8 MB), includes a 1.3-inch OLED screen.
Experienced users can use the Raspberry Pi Zero 2W with Header as an MCU daughterboard to build their own Linux Mesh nodes.

Use Cases

Due to its excellent LoRa transmission and reception performance, the BQ35LORA900V1M is ideal for building backbone mesh networks in regional Mesh communities. The Advanced RX LNA Architecture with dynamic gain control, dynamic impedance matching, and an LNA bypass/disable function allows the module to capture even weaker signals from low-power nodes, ultimately ensuring broader coverage and rock-solid network stability.

Weight 0.1 kg
Dimensions 9 × 3.4 × 1.2 cm

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